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Deposition of a TMDSO ‐ B ased Film by a Non‐ E quilibrium Atmospheric Pressure DC Plasma Jet
Author(s) -
Deng Xiaolong,
Nikiforov Anton Yu,
De Geyter Nathalie,
Morent Rino,
Leys Christophe
Publication year - 2013
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201200166
Subject(s) - x ray photoelectron spectroscopy , atmospheric pressure plasma , volumetric flow rate , analytical chemistry (journal) , deposition (geology) , atmospheric pressure , fourier transform infrared spectroscopy , thin film , oxygen , jet (fluid) , plasma , materials science , chemical vapor deposition , chemistry , chemical engineering , nanotechnology , environmental chemistry , organic chemistry , thermodynamics , paleontology , physics , quantum mechanics , sediment , biology , engineering , oceanography , geology
This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O 2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X‐ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O 2 leading to an increase in SiO 4 units at high oxygen flow rates.