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Plasma Polymerization of APTES to Elaborate Nitrogen Containing Organosilicon Thin Films: Influence of Process Parameters and Discussion About the Growing Mechanisms
Author(s) -
Lecoq Elodie,
Duday David,
Bulou Simon,
Frache Gilles,
Hilt Florian,
Maurau Rémy,
Choquet Patrick
Publication year - 2013
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201200108
Subject(s) - organosilicon , triethoxysilane , plasma polymerization , polymerization , x ray photoelectron spectroscopy , polymer , nitrogen , materials science , thin film , fourier transform infrared spectroscopy , chemical engineering , plasma , deposition (geology) , organic chemistry , polymer chemistry , analytical chemistry (journal) , chemistry , nanotechnology , paleontology , physics , quantum mechanics , sediment , engineering , biology
Plasma polymerization of 3‐aminopropyl‐triethoxysilane (APTES) in microwave late afterglow was studied. First, sol‐gel polymerized APTES was prepared and characterized by ATR–FTIR and XPS. The results obtained were used as a model to define the nature of nitrogen containing groups in the plasma polymer layers. It is shown that the variation of process gas mixture gives the possibility to tailor the chemical composition of the coatings. We show that nitrogen can be present in the thin films as amines, amides, imines or oximes. The analysis of the gas phase composition by OES during the deposition process was realized and based on the correlations established between OES results and thin film compositions, some assumptions on the chemical mechanisms involved in the gas phase are discussed.