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Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition
Author(s) -
Massines Francoise,
SarraBournet Christian,
Fanelli Fiorenza,
Naudé Nicolas,
Gherardi Nicolas
Publication year - 2012
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201200029
Subject(s) - plasma enhanced chemical vapor deposition , thin film , atmospheric pressure plasma , atmospheric pressure , deposition (geology) , materials science , plasma , chemical vapor deposition , nanotechnology , optoelectronics , engineering physics , engineering , meteorology , physics , geology , paleontology , quantum mechanics , sediment
Over the last ten years, expansion of atmospheric pressure plasma solutions for surface treatment of materials has been remarkable, however direct plasma technology for thin film deposition needs still great effort. The objective of this paper is to establish the state of the art on scientific and technologic locks, which have to be opened to consider direct atmospheric pressure plasma‐enhanced chemical vapor deposition (AP‐PECVD) a viable option for industrial application. Basic scientific principles to understand and optimize an AP‐PECVD process are summarized. Laboratory reactor configurations are reviewed. Reference points for the design and use of AP‐PECVD reactors according to the desired thin film properties are given. Finally, solutions to avoid powder formation and to increase the thin film growth rate are discussed.