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Plasma Process. Polym. 6/2011
Author(s) -
Tinck Stefan,
Bogaerts Annemie,
Shamiryan Denis
Publication year - 2011
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201190012
Subject(s) - trench , wafer , etching (microfabrication) , layer (electronics) , materials science , plasma , plasma etching , shallow trench isolation , cover (algebra) , composite material , chemical engineering , nanotechnology , analytical chemistry (journal) , optoelectronics , chemistry , chromatography , engineering , mechanical engineering , physics , quantum mechanics
Cover: Microtrenches are etched in a Si wafer with a Cl 2 /O 2 /Ar plasma as applied in Shallow Trench Isolation (STI). If too much oxygen is present, formation of an oxychloride layer is dominant over etching Si, reducing the etch rate to a value close to zero or even resulting in actual layer growth. (Copyright imec vzw 2011‐05‐12 Courtesy of IMEC.) Further details can be found in the article by S. Tinck, D. Shamiryan, * and A. Bogaerts * on page 490 .