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Hydroxyl Radical Etching Improves Adhesion of Plasma‐Deposited a‐SiO x C y H z Films on Poly(Methylmethacrylate)
Author(s) -
Hall Colin J.,
Murphy Peter J.,
Griesser Hans J.
Publication year - 2012
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201100159
Subject(s) - adhesion , vapours , materials science , radical , substrate (aquarium) , etching (microfabrication) , layer (electronics) , plasma , chemical engineering , plasma etching , deposition (geology) , polymer chemistry , composite material , organic chemistry , chemistry , paleontology , oceanography , physics , quantum mechanics , neuroscience , sediment , engineering , biology , geology
Plasma‐deposited thin films comprising a‐SiO x C y H z with some organic content are of considerable interest as protective coatings. Their application has, however, been hampered by marginal adhesion and durability on some substrates. This study found that optimal adhesion was achieved with plasma pre‐treatments utilising vapours from the alcohol family. Our data show that rapid initial etching of the substrate occurs, probably by action of hydroxyl radicals, followed by deposition of a layer some 10 nm thick which appears to provide a surface capable of strong interfacial bonding with a subsequently deposited a‐SiO x C y H z layer. Compared with non‐depositing plasma pre‐treatments, such dual action provides stronger adhesion on PMMA. This opens up new possibilities for applying protective hard coatings on PMMA.