Premium
Nitrogen Introduction in pp‐HMDSO Thin Films Deposited by Atmospheric Pressure Dielectric Barrier Discharge: An XPS Study
Author(s) -
Maurau Rémy,
Boscher Nicolas D.,
Guillot Jérôme,
Choquet Patrick
Publication year - 2012
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201100144
Subject(s) - x ray photoelectron spectroscopy , nitrogen , dielectric barrier discharge , thin film , deposition (geology) , materials science , atmospheric pressure , argon , dielectric , polymer , analytical chemistry (journal) , chemical engineering , chemical composition , chemistry , organic chemistry , nanotechnology , composite material , optoelectronics , paleontology , oceanography , sediment , geology , engineering , biology
We report on the change of chemistry involved by molecular nitrogen in the deposition process of pp‐HMDSO thin films with an AP‐DBD, using HMDSO as chemical precursor. By modifying the composition of the main gas from pure argon to pure nitrogen, thin films composition varied from SiOC:H to SiOCN:H. A small amount of nitrogen favours polymer chain propagation, by consuming species responsible for chain termination and playing a role in propagation phase. Higher nitrogen content leads to more cross‐linked coatings. The use of optical emission spectroscopy together with FT‐IR and XPS is shown to be relevant to study such processes.