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Interaction Mechanisms between ArO 2 Post‐discharge and Biphenyl
Author(s) -
Dal'Maz Silva Walter,
Belmonte Thierry,
Duday David,
Frache Gilles,
Noël Cedric,
Choquet Patrick,
Migeon HenriNoel,
Maliska Ana Maria
Publication year - 2012
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201100119
Subject(s) - biphenyl , etching (microfabrication) , materials science , coating , oxygen , singlet oxygen , chemical engineering , chemistry , photochemistry , nanotechnology , organic chemistry , layer (electronics) , engineering
Interactions between a late ArO 2 post‐discharge and biphenyl (C 6 H 5 ) 2 are studied. Thin films grown by spin‐coating are efficiently etched by the post‐discharge to get a clean surface after treatment. Thin films are strongly preferentially oriented. But this orientation does not depend on the way the sample is pretreated. The pretreatment can create cracks and modify the etching rate. The etching of the biphenyl occurs by interaction with the singlet state of molecular oxygen O 2 (a 1 Δ g ). [4 + 2] cycloaddition is assumed to be the main process leading to ring opening. Next, a large variety of compounds including alcohols, ketones, acids, and aldehydes are created. Atomic oxygen does not seem to play a significant role in the etching process but it functionalizes the biphenyl by creating alcohol groups.
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