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Full‐Thickness Characterization of Plasma Polymerized Hexane Films Irradiated by an Electron Beam
Author(s) -
Pedersen Rasmus H.,
Scurr David J.,
Roach Paul,
Alexander Morgan R.,
Gadegaard Nikolaj
Publication year - 2012
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201100067
Subject(s) - resist , electron beam lithography , materials science , electron beam processing , cathode ray , irradiation , lithography , analytical chemistry (journal) , x ray lithography , thin film , plasma , electron , optoelectronics , optics , chemistry , nanotechnology , physics , layer (electronics) , quantum mechanics , chromatography , nuclear physics
Thin plasma polymerized hexane (ppHex) films have been shown to be useful as a novel resist for electron beam lithography. We present time‐of‐flight secondary ion mass spectroscopy analysis of ∼50 nm thick ppHex films deposited at two different RF powers (10 and 50 W) followed by exposure to an electron beam at various doses. As‐deposited, high‐power and low‐power films exhibit differences in chemical composition, explaining an experimentally observed difference in solubility. Exposure of the ppHex films to an electron beam at high doses (>5 mC cm −2 ) increases the amount of cross‐linking in the ppHex film, rendering them insoluble in a developer, and allowing for the material to be used as a novel resist for electron beam lithography.