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Microwave ECR Plasma Assisted MOCVD of Y 2 O 3 Thin Films Using Y(tod) 3 Precursor and Their Characterization
Author(s) -
Barve Shruti,
Deo Mukul,
Kar Rajib,
Sreenivasan Nimisha,
Kishore Ramaswamy,
Biswas Arup,
Bhanage Bhalchandra,
Rao Mohan,
Gantayet Lalit Mohan,
Patil Dinkar
Publication year - 2011
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201000147
Subject(s) - thin film , materials science , chemical vapor deposition , x ray photoelectron spectroscopy , analytical chemistry (journal) , electron cyclotron resonance , metalorganic vapour phase epitaxy , yttrium , ellipsometry , trimethylsilane , scanning electron microscope , oxide , plasma , nanotechnology , chemistry , layer (electronics) , composite material , chemical engineering , metallurgy , epitaxy , engineering , physics , chromatography , quantum mechanics , medicinal chemistry
Yttrium oxide (Y 2 O 3 ) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7‐trimethyl‐3,5‐octanedionates, commonly known as Y(tod) 3 which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1–9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X‐ray photoelectron spectroscopy, glancing angle X‐ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating‐pressure‐sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod) 3 precursor for deposition of Y 2 O 3 films using plasma assisted CVD process.