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Thermal Stability of TaN‐Based Thin Layers for Cu Metallization
Author(s) -
Nazon Julien,
Berger MarieHélène,
Sarradin Joël,
Tedenac JeanClaude,
Fréty Nicole
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200932107
Subject(s) - materials science , diffusion barrier , thermal stability , transmission electron microscopy , substrate (aquarium) , diffraction , diffusion , thin film , layer (electronics) , barrier layer , analytical chemistry (journal) , atmospheric temperature range , optics , composite material , nanotechnology , chemistry , oceanography , physics , organic chemistry , chromatography , geology , meteorology , thermodynamics
The diffusion of Cu through TaN‐based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayer barrier of 50 nm:50 nm:50 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN‐based thin layers were determined from glancing incidence angle X‐ray diffraction and transmission electron microscopy, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient than the TaN single layer in preventing Cu diffusion.