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Magnetic‐Field Induced Strains in Ferromagnetic Shape Memory Alloy Ni 55 Mn 23 Ga 22 Deposited by RF‐Magnetron Sputtering
Author(s) -
Bernard Florent,
Rousselot Christophe,
Delobelle Patrick,
Hirsinger Laurent,
Burdet Pierre
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200932104
Subject(s) - materials science , ferromagnetism , sputter deposition , silicon , sputtering , thin film , alloy , metallurgy , magnetic field , magnetometer , analytical chemistry (journal) , composite material , condensed matter physics , nanotechnology , chemistry , physics , chromatography , quantum mechanics
1.5 µm–Ni 55 Mn 23 Ga 22 ferromagnetic thin films were deposited onto silicon substrates and silicon single beam cantilever using radio‐frequency magnetron sputtering. As‐deposited sample and heat‐treated thin films were studied on their silicon substrates and peeled off to determine the influence of the stress. Post‐heat treatment process allows at the films to achieve the shape memory effect (SME). Vibrating sample magnetometer (VSM) and deflection measurement of the sample annealed at 873 K during 36 ks exhibit ferromagnetic martensitic structure with a typical SME response to the magnetic field induced strains which match the values of the bulk material.