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Multiphysics Coupling Simulation of Silicon Nitride CVD Using an RLSA Source
Author(s) -
Brcka Jozef,
Kang SongYun
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931903
Subject(s) - multiphysics , silicon nitride , materials science , chemical vapor deposition , plasma enhanced chemical vapor deposition , plasma , convection , silicon , mechanics , molecular physics , optoelectronics , chemistry , thermodynamics , physics , quantum mechanics , finite element method
The plasma produced by a radial line slot antenna (RLSA) source is discussed based on a simulation using a multiphysics coupled 2D fluid model. The technological aspects in a silicon nitride chemical vapor deposition (CVD) process using a disilane and ammonia mixture are addressed. The model includes the incompressible Navier–Stokes module (INSM), the multiple convection and diffusion transport modules (CDTM), the convection and conduction heat transport (CCHT) for gas and electron temperature, and the transverse electromagnetic (TEM) wave propagation for a planar microwave source structure coupled to the plasma. The dominant precursors, deposition rate and mechanisms, and performance of the CVD process in terms of the film properties are investigated. The ionic and radical component 2D distributions are calculated and the simulation results are correlated with experimental data. The significant impact of the surface reactions with the involvement of H, NH, and N x H y radicals and ions is established.