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Investigation of Plasma Parameters in a VHF Plasma With Narrow Gap Under High Gaseous Pressure
Author(s) -
Muta Hiroshi,
Kishida Shinichi,
Tanaka Masayoshi,
Yamauchi Yasuhiro,
Baba Tomoyoshi,
Takeuchi Yoshiaki,
Takatsuka Hiromu,
Kawai Yoshinobu
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931901
Subject(s) - langmuir probe , torr , plasma , ion , dissociation (chemistry) , atomic physics , quadrupole mass analyzer , plasma cleaning , hydrogen , chemistry , mass spectrometry , plasma parameters , materials science , plasma diagnostics , analytical chemistry (journal) , physics , organic chemistry , chromatography , quantum mechanics , thermodynamics
The plasma parameters in a VHF plasma with a narrow gap under high gaseous pressure were experimentally investigated. As a result of the Langmuir probe measurement for hydrogen plasma with a gap length of 5 mm and a pressure of 1 torr, it was found that the electron temperature (∼10 eV) was high enough to promote the dissociation reaction of SiH 4 molecules, and that a large amount of negative ions which could play a role in reducing the sheath potential were produced. On the other hand, the results of the ion measurement using a quadrupole mass spectrometer with an energy analyzer indicated that the highest produced ion was H 3 +and its incident energy to the substrate was low due to the collisions. These results suggest that the condition of high pressure and narrow gap are advantageous for the preparation of high‐quality µ c‐Si thin films.