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Influence of Ion Bombardment and Annealing on the Structural and Optical Properties of TiO x Thin Films Deposited in Inductively Coupled TTIP/O 2 Plasma
Author(s) -
Granier Agnes,
Begou Thomas,
Makaoui K.,
Soussou Akram,
Bêche Bruno,
Gaviot Etienne,
Besland MariePaule,
Goullet Antoine
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931804
Subject(s) - anatase , materials science , amorphous solid , annealing (glass) , rutile , analytical chemistry (journal) , thin film , biasing , refractive index , titanium , ion , inductively coupled plasma , plasma , chemical engineering , optoelectronics , nanotechnology , crystallography , chemistry , composite material , metallurgy , voltage , biochemistry , physics , organic chemistry , chromatography , photocatalysis , quantum mechanics , engineering , catalysis
TiO 2 films were deposited in a low‐pressure inductively coupled rf plasma in O 2 /titanium tetraisopropoxide (TTIP). First, depositions were realized at floating potential using nitrogen as bubbling gas. The structural and optical properties of the films were studied, before and after annealing at 450 °C under air. As expected, as‐deposited films are amorphous, with a columnar structure. A post‐annealing under flowing air allows obtaining partially crystallized films in anatase phase. Secondly, films were deposited using nitrogen and oxygen as bubbling gas. In both cases, TiO 2 ‐like films exhibit very similar structure and optical properties. Finally, the effect of biasing the substrate was investigated. An improvement of film properties has been found for a bias voltage of −15 V at T <100 °C: deposited TiO 2 film is dense (3.7) with a high refractive index ( n = 2.32 at 634 nm) and partially crystallized in rutile phase.