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Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources
Author(s) -
Jatta Sandro,
Haberle Klaus,
Klein Andreas,
Schafranek Robert,
Koegel Benjamin,
Meissner Peter
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931405
Subject(s) - plasma enhanced chemical vapor deposition , materials science , inductively coupled plasma , analytical chemistry (journal) , substrate (aquarium) , thin film , etching (microfabrication) , silicon nitride , chemical vapor deposition , inductively coupled plasma atomic emission spectroscopy , plasma processing , silicon oxide , plasma , silicon , optoelectronics , chemistry , nanotechnology , layer (electronics) , physics , oceanography , chromatography , quantum mechanics , geology
This paper presents the investigations of thin dielectric silicon oxide (SiO x ) and silicon nitride (SiN x ) films deposited below 100 °C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)‐source. The influence of the deposition pressure and the applied RF‐power to the plasma from the ICP‐source and a second RF‐power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate R dep , stress σ and etching rate R etch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF‐generator connected to substrate electrode on etching rate and hence on film quality is identified for SiO x but the converse effect is identified for SiN x ‐films.