Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources

This paper presents the investigations of thin dielectric silicon oxide (SiO x ) and silicon nitride (SiN x ) films deposited below 100 °C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)‐source. The influence of the deposition pressure and the applied RF‐power to the plasma from the ICP‐source and a second RF‐power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate R dep , stress σ and etching rate R etch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF‐generator connected to substrate electrode on etching rate and hence on film quality is identified for SiO x but the converse effect is identified for SiN x ‐films.