Premium
Characterization of a N 2 /CH 4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition
Author(s) -
Bulou Simon,
Le Brizoual Laurent,
Hugon Robert,
De Poucques Ludovic,
Belmahi Mohammed,
Migeon HenriNoël,
Bougdira Jamal
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931404
Subject(s) - fourier transform infrared spectroscopy , spectroscopy , analytical chemistry (journal) , silicon , materials science , ternary operation , deposition (geology) , plasma enhanced chemical vapor deposition , infrared spectroscopy , characterization (materials science) , scanning electron microscope , chemical vapor deposition , chemistry , chemical engineering , nanotechnology , organic chemistry , optoelectronics , paleontology , physics , quantum mechanics , sediment , computer science , engineering , composite material , biology , programming language
Microwave plasma assisted chemical vapour deposition of CH 4 /N 2 gas mixture using an additive solid silicon is used to synthesize SiCN. To better understand the mechanisms involved, species such as C, Si, NH, CN, C 2 and N 2 are observed by means of optical emission spectroscopy. In situ Fourier transform infrared spectroscopy (FTIR) is used as a plasma diagnostic and CH 4 , NH 3 , HCN and C 2 H 2 have been detected. Deposits are achieved at various CH 4 ratios (1, 4 and 8%) and analysed by means of scanning electron microscopy, energy dispersion X‐ray spectroscopy and FTIR spectroscopy. Adding a silicon source permits to obtain thicker layers confirming the major role of Si in the carbonitride deposition process. Deposits obtained at 8% of CH 4 have a composition about 35% of Si, 30% C and 30% N and showed evidence of ternary SiCN system.