Characterization of a N 2 /CH 4  Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition | Zendy

Bulou Simon | Zendy; Le Brizoual Laurent | Zendy; Hugon Robert | Zendy; De Poucques Ludovic | Zendy; Belmahi Mohammed | Zendy; Migeon HenriNoël | Zendy; Bougdira Jamal | Zendy

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Characterization of a N 2 /CH 4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Author(s) -

Bulou Simon,

Le Brizoual Laurent,

Hugon Robert,

De Poucques Ludovic,

Belmahi Mohammed,

Migeon HenriNoël,

Bougdira Jamal

Publication year - 2009

Publication title -

plasma processes and polymers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.644

H-Index - 74

eISSN - 1612-8869

pISSN - 1612-8850

DOI - 10.1002/ppap.200931404

Subject(s) - fourier transform infrared spectroscopy , spectroscopy , analytical chemistry (journal) , silicon , materials science , ternary operation , deposition (geology) , plasma enhanced chemical vapor deposition , infrared spectroscopy , characterization (materials science) , scanning electron microscope , chemical vapor deposition , chemistry , chemical engineering , nanotechnology , organic chemistry , optoelectronics , paleontology , physics , quantum mechanics , sediment , computer science , engineering , composite material , biology , programming language

Microwave plasma assisted chemical vapour deposition of CH 4 /N 2 gas mixture using an additive solid silicon is used to synthesize SiCN. To better understand the mechanisms involved, species such as C, Si, NH, CN, C 2 and N 2 are observed by means of optical emission spectroscopy. In situ Fourier transform infrared spectroscopy (FTIR) is used as a plasma diagnostic and CH 4 , NH 3 , HCN and C 2 H 2 have been detected. Deposits are achieved at various CH 4 ratios (1, 4 and 8%) and analysed by means of scanning electron microscopy, energy dispersion X‐ray spectroscopy and FTIR spectroscopy. Adding a silicon source permits to obtain thicker layers confirming the major role of Si in the carbonitride deposition process. Deposits obtained at 8% of CH 4 have a composition about 35% of Si, 30% C and 30% N and showed evidence of ternary SiCN system.

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