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On the Plasma Chemistry of CH 4 H 2 Ar System Relevant to Diamond Deposition Process by Plasma Enhanced Chemical Vapor Deposition
Author(s) -
Shokri Babak,
Yaghmaee Maziar S.,
Sarani Abdollah
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200931005
Subject(s) - deposition (geology) , plasma enhanced chemical vapor deposition , chemical vapor deposition , diamond , chemistry , plasma processing , plasma , analytical chemistry (journal) , ionic bonding , chemical engineering , environmental chemistry , ion , organic chemistry , physics , paleontology , quantum mechanics , sediment , engineering , biology
Diamond films are extensively deposited using plasma enhanced chemical vapor deposition (PECVD). In this work, the most important non‐neutral plasma surface processes, which are needed to analyze the deposition mechanism of diamond films from plasma gas phase, are considered. Moreover, the role of ionic species, which is mostly neglected in deposition investigations, has been considered. To analyze the diamond deposition process, we use the reaction probability algorithm for different surface phenomena. Then, using different methods like Motz and Wise modified relation, the reaction probability is transformed to the mass action kinetic rate constant. Our results lead to the calculation of rate coefficients for non‐neutral gas‐surface reactions that take place during the diamond deposition from plasma in CH 4 H 2 Ar system.