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Simulation of the Substrate Temperature Field for Plasma Assisted Chemical Etching
Author(s) -
Meister Johannes,
Böhm Georg,
Eichentopf IngaMaria,
Arnold Thomas
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200930509
Subject(s) - figuring , materials science , etching (microfabrication) , isotropic etching , jet (fluid) , plasma , reactive ion etching , heat transfer , heat flux , substrate (aquarium) , machining , mechanics , plasma etching , composite material , optics , metallurgy , oceanography , physics , layer (electronics) , quantum mechanics , geology
Surface figuring using reactive plasma jet machining is a promising technology for the manufacture of optical elements. Due to the pure chemical etching mechanism the material removal rate during plasma jet treatment strongly depends on the workpiece surface temperature, which is influenced by the jet heat flux. This paper presents the basis for an enhanced process simulation by introducing a transient heat transfer model including a moving heat source. A comprehensive method of determination for corresponding model parameters has been developed. It is based on temperature measurements during a well defined etching experiment. The model is able to predict the workpiece surface temperature distribution at any given time.