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Field Emission Enhancement in Ion Implanted Ultra‐nanocrystalline Diamond Films
Author(s) -
Palathinkal Thomas Joseph,
Tai NyanHwa,
Lee ChiYoung,
Niu Huan,
Cheng HsiuFung,
Pong WayFaung,
Lin INan
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200930107
Subject(s) - materials science , ion implantation , annealing (glass) , ion , diamond , field electron emission , nanocrystalline material , grain boundary , nanotechnology , analytical chemistry (journal) , electron , composite material , chemistry , microstructure , physics , organic chemistry , chromatography , quantum mechanics
The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra‐nanocrystalline diamond (UNCD) films are reported. Low‐dose (10 12 ions/cm 2 ) B ion implantation & annealing processes insignificantly changed the EFE properties, high‐dose (10 15 ions/cm 2 ) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B ion implantations & annealing processes. Such a phenomenon is accounted for by the fact that N ions residing in grain boundaries can convert the UNCD grains into semi‐conducting by charge‐transfer process, whereas B ions react with carbon forming covalent bonds and are not transferring the charges with UNCD grains.