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Kinetics of RPECVD Organosilicon Polymer Post‐treatment in a N 2 /O 2 Microwave Plasma Remote Afterglow
Author(s) -
Rich Sami Abou,
Mille Vianney,
Vivien Céline,
Godey Sylvie,
Supiot Philippe
Publication year - 2010
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200900185
Subject(s) - organosilicon , fourier transform infrared spectroscopy , x ray photoelectron spectroscopy , materials science , microwave , analytical chemistry (journal) , polymer , afterglow , interferometry , fourier transform spectroscopy , etching (microfabrication) , infrared , fourier transform , chemistry , optics , layer (electronics) , polymer chemistry , nanotechnology , organic chemistry , nuclear magnetic resonance , physics , composite material , gamma ray burst , quantum mechanics , astronomy
The aim of this work is to study the transformation of p lasma p olymerised t etra m ethyl d i s il o xane (ppTMDSO) films deposited by microwave induced RPECVD through exposure to a N 2 /O 2 microwave plasma afterglow in a duplex reactor. The film thickness, structure and composition of the as‐deposited or transformed ppTMDSO films are determined by profilometry, interferometry, Fourier transform infrared and X‐ray photoelectron spectroscopies. The analysis of the post‐treatment effect is carried out through a combination of results obtained from FTIR study and subsequent optical interferometry study during CF 4 etching of deposits. A carbon removal and an enhancement of cross‐linking of the SiOSi chains are shown. We also propose a model to determine the transformed layer depth with taking the film contraction into account for the first time for this family of polymers.

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