Premium
Growth Mechanism of Oxygen‐Containing Functional Plasma Polymers
Author(s) -
Hegemann D.,
Körner E.,
Albrecht K.,
Schütz U.,
Guimond S.
Publication year - 2010
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200900144
Subject(s) - plasma , polymer , oxygen , plasma polymerization , deposition (geology) , polymerization , etching (microfabrication) , kinetics , chemistry , plasma etching , chemical engineering , drop (telecommunication) , materials science , analytical chemistry (journal) , nanotechnology , organic chemistry , paleontology , telecommunications , physics , layer (electronics) , quantum mechanics , sediment , computer science , engineering , biology
Regarding the recent debate on the usefulness of macroscopic kinetics for plasma polymerization, we further investigated the deposition of oxygen‐containing functional plasma polymers based on low pressure CO 2 /C 2 H 4 RF discharges in order to find differences and transitions in the growth mechanism. A reduction in deposition rate with increasing CO 2 /C 2 H 4 ratio and a drop in deposition rate at enhanced energy input have been observed. Both effects are found to be mainly related to plasma‐chemical processes such as the production of film‐forming species and oxidation in the gas phase. In contrast to plasma etching with non‐polymerizing gases, ion‐enhanced etching effects were found to play a secondary role for the deposition of oxygen‐containing functional plasma polymers.