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Combined Continuous Wave and Pulsed Plasma Modes: For More Stable Interfaces with Higher Functionality on Metal and Semiconductor Surfaces
Author(s) -
Li Li,
Dai Xiujuan J.,
Xu Hong S.,
Zhao Jing H.,
Yang Ping,
Maurdev George,
du Plessis Johan,
Lamb Peter R.,
Fox Bronwyn L.,
Michalski Wojtek P.
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200900042
Subject(s) - semiconductor , materials science , continuous wave , plasma , layer (electronics) , metal , optoelectronics , aqueous solution , polymerization , nanotechnology , amine gas treating , chemical engineering , composite material , laser , polymer , chemistry , optics , metallurgy , organic chemistry , engineering , physics , quantum mechanics
A novel approach to producing improved bio‐interfaces by combining continuous wave (CW) and pulsed plasma polymerization (PP) modes is reported. This approach has enabled the generation of stable interfaces with a higher density of primary amine functionality on metal, ceramic and semiconductor surfaces. Heptylamine (HA) was used as the amine‐precursor. In this new design, a thin CW PPHA layer is introduced to provide strong cross‐linking and attachment to the metal or semiconductor surfaces and to provide a good foundation for better bonding a pulsed PPHA layer with high retention of functional groups. The combined mode provides the pulsed mode advantage of a 3‐fold higher density of primary amines, while retaining much of the markedly higher stability in aqueous solutions of the continuous mode.