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Characteristics of the Deposition Rate per Unit Power on Pulsed‐DC Magnetron Sputtering Source
Author(s) -
An Sanghyuk,
In Junghwan,
Chang Hongyoung
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200900026
Subject(s) - duty cycle , materials science , deposition (geology) , sputter deposition , high power impulse magnetron sputtering , power (physics) , cavity magnetron , sputtering , pulsed power , optoelectronics , pulsed dc , voltage , pulse (music) , nuclear engineering , analytical chemistry (journal) , electrical engineering , thin film , chemistry , physics , engineering , nanotechnology , thermodynamics , paleontology , chromatography , sediment , biology
The deposition rate per unit power in a pulsed‐DC magnetron sputtering source was examined according to the target material, average power, and duty cycle. In a short duty cycle condition, the deposition rate per unit power of Ti and Cu decreased with increasing the pulse power, while that of Al and Ti in a long duty cycle condition did not change in relation to the pulse power. These results can be explained in terms of the characteristics of the sputtering yield in relation to the bombarding ion energy. Based on these results, a pulse voltage with two steps is proposed in order to increase the deposition rate per unit power.