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A Chemical Study of Plasma‐Deposited Organosilicon Thin Films as Low‐ k Dielectrics
Author(s) -
Coclite Anna M.,
Milella Antonella,
Palumbo Fabio,
Fracassi Francesco,
d'Agostino Riccardo
Publication year - 2009
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200800211
Subject(s) - organosilicon , siloxane , materials science , silane , plasma enhanced chemical vapor deposition , thermal stability , dielectric , thin film , annealing (glass) , hexamethyldisiloxane , polymer , composite material , chemical engineering , permittivity , polymer chemistry , plasma , nanotechnology , physics , optoelectronics , quantum mechanics , engineering
Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane‐based precursors resulted in films with permittivities as low as 2.3 with a limited thickness loss of 6% upon thermal annealing at 400 °C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross‐linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane‐based films. Substrate heating (150 °C) during deposition ensured the best balance between very low permittivities and good thermal stability.