Premium
High‐Rate SiO 2 Deposition by Oxygen Cold Arc Plasma Jet at Atmospheric Pressure
Author(s) -
Han Man H.,
Noh Joo H.,
Lee Tae I.,
Choi Jai H.,
Park Ki W.,
Hwang Hyeon S.,
Song Kie M.,
Baik Hong K.
Publication year - 2008
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200800061
Subject(s) - plasma , atmospheric pressure plasma , jet (fluid) , deposition (geology) , plume , analytical chemistry (journal) , substrate (aquarium) , atmospheric pressure , plasma torch , x ray photoelectron spectroscopy , materials science , oxygen , chemistry , meteorology , nuclear magnetic resonance , environmental chemistry , aerospace engineering , physics , geology , paleontology , oceanography , organic chemistry , quantum mechanics , sediment , engineering
SiO 2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O 2 gas of 30 L · min −1 , while a He/TEOS mixture of 1 000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet.