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Chemistry of Plasma‐Polymerized Vinyltriethoxysilane Controlled by Deposition Conditions
Author(s) -
Cech Vladimir,
Zemek Josef,
Perina Vratislav
Publication year - 2008
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200800007
Subject(s) - vinyltriethoxysilane , x ray photoelectron spectroscopy , plasma enhanced chemical vapor deposition , chemical vapor deposition , thin film , chemistry , analytical chemistry (journal) , polymer , carbon film , polymerization , plasma polymerization , fourier transform infrared spectroscopy , wafer , plasma , silicon , chemical engineering , materials science , silane , nanotechnology , organic chemistry , physics , quantum mechanics , engineering
Plasma‐polymerized thin films of vinyltriethoxysilane were deposited on IR‐transparent silicon wafers using plasma‐enhanced chemical vapor deposition at a wide range of RF pulsed power (0.05–25 W). The deposited films were analyzed by various spectroscopic techniques (RBS, ERDA, XPS, and FTIR) in order to compare their chemical structure and elemental composition, which were correlated with plasma products monitored by mass spectroscopy. Thin polymer films deposited at 0.05 W were SiO‐rich (55 at.‐%), while those prepared at 25 W were dominated by carbon (66 at.‐%). The organic/inorganic character (C/Si ratio) of plasma polymer varied widely, from 2.5 to 7.3 with enhanced power. The chemical structure of the polymer network and side groups was also controlled by the effective power. Chemical analyses enabled us to gain an idea of the chemical structure of the films.