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Inductively Coupled Plasma Source Using Internal Multiple U‐Type Antenna for Ultra Large‐Area Plasma Processing
Author(s) -
Lim Jong Hyeuk,
Kim Kyong Nam,
Yeom Geun Young
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200732316
Subject(s) - inductively coupled plasma , antenna (radio) , materials science , plasma , antenna factor , variable capacitor , radio frequency power transmission , optoelectronics , capacitor , voltage , antenna measurement , electrical engineering , physics , engineering , amplifier , cmos , quantum mechanics
An inductively coupled plasma source with internal‐type linear inductive antennas named as “internal multiple U‐type antenna” was developed for the substrate size of 2 300 × 2 000 mm 2 and the characteristics of the large‐area inductive plasma source were investigated. High density plasmas on the order of 1.18 × 10 11 cm −3 could be obtained at the pressure of 15 mTorr Ar gas and the RF power of 8 kW with good plasma stability. In addition, by using variable capacitors at the end of the antenna, lower antenna voltage and more uniform antenna voltage distribution could be obtained. When a photoresist film was etched using O 2 plasma with 8 kW RF power, an etch uniformity less than 11% could be obtained using the multiple U‐type antenna on the substrate size larger than 7th generation (2 200 × 1 870 mm 2 ).