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Simulation and Characterization of IPVD System with External ICP Antenna
Author(s) -
Brcka Jozef
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200732306
Subject(s) - ionization , argon , plasma , atomic physics , penning ionization , sputtering , chemistry , ion , materials science , analytical chemistry (journal) , thin film , physics , nanotechnology , organic chemistry , quantum mechanics , chromatography
The experimental ionized physical vapor deposition (IPVD) system with an external antenna is described, and experimental characterization of the plasma was performed: plasma density was up to 5 × 10 12 cm −3 , the argon ionization ratio was ∼0.2–0.4%, and copper ionization ratio was ∼28% in bulk plasma, corresponding to ionized Cu + flux ratio in range the 73–95%. To aid further development and IPVD technology extendibility to the future nanoscale fabrication, the 2D plasma fluid model for IPVD system was developed. The model comprised the Cu + Ar collisional mechanism including charge exchange and Penning ionization, considering gas rarefaction effect, variable ion mobility approach, and analytical approach in description of the thermalization of sputtered Cu. The simulation results were validated through experimental measurements of the plasma characteristics by electrical probe and provided reasonable results in 2 to 15 Pa pressure range. The implementation of the model for optimized design of scaled‐up IPVD system was demonstrated.