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Cold Cathode of p‐Type Semiconducting Diamond Films for Gas Discharge
Author(s) -
Hatta Akimitsu,
Nakatsuma Hiroshi,
Yanai Keishi,
Nishikawa Tsuyoshi
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200732304
Subject(s) - diamond , materials science , cathode , cold cathode , electric discharge in gases , boron , semiconductor , material properties of diamond , glow discharge , optoelectronics , analytical chemistry (journal) , composite material , plasma , chemistry , electrical engineering , physics , organic chemistry , quantum mechanics , chromatography , engineering
Cold cathodes of diamond films have been investigated for a possible gas discharge application. Diamond film has been known as an effective electron emissive material due to its negative electron affinity (NEA) surface. Diamond material can be a p‐type semiconductor if boron (B) is used as an accepter. When using a B‐doped p‐type diamond as a cathode, the discharge voltage decreased compared with conventional cathode materials such as Ni and stainless steel. Hydrogenation of the diamond surface is essential for the lowering of the discharge voltage. During the discharge, however, the diamond surface was damaged by ion bombardment and resulted in an increase in discharge voltage within a half an hour.