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Positive Etch Profiles in Silicon with Improved Pattern Quality
Author(s) -
Richter Karola,
Zschätzsch Gerd,
Bartha JohannWolfgang
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200732104
Subject(s) - microelectromechanical systems , silicon , etching (microfabrication) , materials science , fabrication , etch pit density , tilt (camera) , optoelectronics , plasma etching , nanotechnology , casting , layer (electronics) , composite material , mechanical engineering , engineering , medicine , alternative medicine , pathology
The patterning of silicon substrates is one of the most important steps for the fabrication of microelectromechanical systems (MEMS), microfluidic devices or casting moulds. For several years, silicon structures with positive etch profiles, i.e. with tilt angles <90° have been attracting increasing interest. After silicon patterning with positive etch profiles, a small silicon seam right below the etch mask in the upper region of the sidewalls can render the created device useless. Besides an optimization of the positive profile etching process, the correction of these profile defects was the aim of our work. We investigated the influence of a post‐treatment by various plasma etching processes on a previously created etch profile.