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Influence of Oxygen on the Chemical Structure of Plasma Polymer Films Deposited from a Mixture of Tetravinylsilane and Oxygen Gas
Author(s) -
Cech Vladimir,
Studynka Jan,
Janos Filip,
Perina Vratislav
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200731903
Subject(s) - oxygen , analytical chemistry (journal) , elastic recoil detection , rutherford backscattering spectrometry , polymer , materials science , x ray photoelectron spectroscopy , thin film , silicon carbide , chemical composition , infrared spectroscopy , amorphous solid , plasma enhanced chemical vapor deposition , silicon , chemical structure , chemical engineering , chemistry , nanotechnology , composite material , crystallography , organic chemistry , engineering , metallurgy
Tetravinylsilane was used to deposit hydrogenated amorphous silicon carbide (a‐SiC:H) films with vinyl groups as functional species using an RF (13.56 MHz) pulsed plasma. Oxygen gas was mixed in tetravinylsilane to improve the compatibility of a‐SiOC:H thin films with the silicon dioxide component. The oxygen‐to‐total‐flow rate ratio and effective power were the only variable deposition parameters. The deposited films were analyzed by Rutherford backscattering spectrometry, elastic recoil detection analysis, and infrared spectroscopy to determine the elemental composition and chemical structure of the plasma polymer. The chemical structure of the films was correlated with plasma species monitored by mass spectroscopy during the deposition process. The results clarified changes in the chemical structure of the films under the influence of oxygen.