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PECVD Synthesis of Polysiloxane‐Like Thin Films with Very Low Contact Angle Hysteresis
Author(s) -
Borella Mathias,
Plissonnier Marc,
Belmonte Thierry
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200731902
Subject(s) - contact angle , plasma enhanced chemical vapor deposition , octamethylcyclotetrasiloxane , wetting , hysteresis , materials science , thin film , surface energy , dissociation (chemistry) , analytical chemistry (journal) , composite material , nanotechnology , chemistry , condensed matter physics , polymer chemistry , organic chemistry , physics
This work deals with the control of the contact angle hysteresis on surfaces of thin films grown by RF‐PECVD from octamethylcyclotetrasiloxane. Two growth modes are obtained, depending on the ratio W / F p of the plasma power to the precursor flow rate. At high ratio, fragmentation and dissociation prevail, otherwise oligomerization dominates. There is a continuous evolution of the film conformation. Surface energy depends linearly on W / F p , whereas the chemical composition hardly varies. The contact angle hysteresis only depends on the growth mode in the oligomerization domain. Preserving the cyclic character of the precursor favours the decrease of the triple line anchorage—Δ θ < 3°—in wettability test.