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Synthesis of SiZnO Composite Thin Films by a Hybrid PECVD‐PVD Radiofrequency Process
Author(s) -
Daniel Alain,
Belmonte Thierry
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200731701
Subject(s) - hexamethyldisiloxane , plasma enhanced chemical vapor deposition , materials science , substrate (aquarium) , composite number , zinc , thin film , deposition (geology) , layer (electronics) , chemical engineering , silicon oxide , volumetric flow rate , sputtering , chemical vapor deposition , silicon , analytical chemistry (journal) , composite material , plasma , nanotechnology , chemistry , metallurgy , chromatography , silicon nitride , paleontology , oceanography , physics , quantum mechanics , sediment , geology , engineering , biology
ZnSiO composite thin films are synthesised in a hybrid process where radiofrequency (RF) sputtering and plasma enhanced chemical vapour deposition (PECVD) occur simultaneously. A zinc target is sputtered in a gas mixture containing hexamethyldisiloxane (HMDSO–Si 2 C 6 H 18 O). With this process, any composition of the deposited layer can be obtained from zinc oxide to silica by simply controlling the flow rate of HMDSO in the reactor. The structure, composition and deposition rate of the layers depend on the gas mixture, the target‐to‐substrate distance and the HMDSO flow rate. Composite thin films containing a few percents of silicon show a dense morphology compared with the columnar zinc oxide layers.