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Ti‐Si‐N Films with a High Content of Si
Author(s) -
Musil Jindrich,
Zeman Petr,
Dohnal Pavel
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200731408
Subject(s) - materials science , amorphous solid , substrate (aquarium) , sapphire , sputter deposition , sputtering , thin film , composite material , analytical chemistry (journal) , metallurgy , crystallography , nanotechnology , optics , chemistry , laser , oceanography , physics , chromatography , geology
Abstract The article reports on mechanical properties and oxidation of amorphous Ti‐Si‐N films with a high (>20 at.‐%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al 2 O 3 substrates. It was found that (1) the Ti‐Si‐N films with a high (≥50 at.‐%) content of N are X‐ray amorphous and exhibit (i) relatively high hardness H ranging from ∼20 to 27 GPa and (ii) high oxidation temperature achieving ∼1 480 °C for the a‐Ti‐Si‐N film on the Al 2 O 3 (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.