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Deposition of SnO 2 :F Thin Films on Polycarbonate Substrates by PECVD for Antifouling Properties
Author(s) -
Jubault Marie,
Pulpytel Jerome,
Cachet Hubert,
Boufendi Laifa,
ArefiKhonsari Farzaneh
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730903
Subject(s) - plasma enhanced chemical vapor deposition , materials science , thin film , amorphous solid , electrical resistivity and conductivity , substrate (aquarium) , deposition (geology) , polycarbonate , chemical vapor deposition , chemical engineering , argon , tin oxide , layer (electronics) , analytical chemistry (journal) , nanotechnology , doping , composite material , chemistry , optoelectronics , organic chemistry , oceanography , engineering , sediment , geology , electrical engineering , biology , paleontology
SnO 2 :F thin films were deposited on polycarbonate and glass substrates by RF capacitively coupled plasma enhanced chemical vapor deposition (PECVD) using a mixture of tetramethyltin (TMT) [Sn(CH 3 ) 4 ], argon, oxygen as precursors. The effects of the substrate temperature, deposition time and doping on the resistivity and the morphology of the films have been studied. The as‐deposited films appear to have higher carrier mobilities than amorphous ones, in the range of 5 and 7.5 cm 2 · V −1 · s −1 , which could be explained by the presence of nanocrystallites. In order to understand the nanostructure of the films, we studied the formation of nanoparticles and dust particles in the discharge. Finally, we have shown that the incorporation of less than 3% of F in the tin oxide layer could decrease the resistivity down to 3 · 10 −3 Ω · cm.