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Effect of Hydrogen on Reactive Sputtering of Transparent Oxide Films
Author(s) -
Ondok Václav,
Musil Jindřich
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730901
Subject(s) - sputtering , materials science , electrical resistivity and conductivity , partial pressure , hydrogen , oxide , sputter deposition , oxygen , analytical chemistry (journal) , cavity magnetron , volumetric flow rate , thin film , chemistry , nanotechnology , metallurgy , electrical engineering , thermodynamics , physics , chromatography , organic chemistry , engineering
The article reports on the effect of addition of H 2 into a mixture of Ar + O 2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) InSnO (ITO), (ii) TiO 2 , (iii) TiYO, and (iv) ZrO 2 films. It was found that the addition of H 2 into Ar + O 2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage U d , (ii) strong change of the dependence $p_{{\rm O}_2 } = f\left( {\phi _{{\rm O}_{\rm 2} } } \right)$ , and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here $p_{{\rm O}_2 }$ and $\phi _{{\rm O}_{\rm 2} }$ are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.