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Mesoscopic Modelling of Polymer‐Based Optoelectronic Devices
Author(s) -
Barbosa Hélder M. C.,
Ramos Marta M. D.
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730411
Subject(s) - mesoscopic physics , materials science , electrode , optoelectronics , active layer , polymer , electron , diode , layer (electronics) , nanotechnology , composite material , condensed matter physics , physics , quantum mechanics , thin film transistor
Substantial progress has been made in fabricating optoelectronic devices using polymers as an active material. In polymer light emitting diodes (PLEDs), a balanced injection of electrons and holes from the electrodes is fundamental to increase their performance. Using a mesoscopic model based on a generalized Monte‐Carlo method, we studied the influence of changing zero‐field barrier heights at both electrode–polymer interfaces in the performance of a PLED with an active layer of poly( para ‐phenylenevinylene) (PPV). Our results show that by controlling the electrodes work functions it is possible to tune the region inside the device where charge recombination preferentially takes place.