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Correlation Between Processing and Properties of Titanium Oxycarbide, TiC x O y , Thin Films
Author(s) -
Fernandes Ana C.,
Carvalho Pedro,
Vaz Filipe,
Parreira Nuno M. G.,
Goudeau Philippe,
Bourhis Eric Le,
Rivière JeanPaul
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730407
Subject(s) - materials science , titanium , thin film , oxygen , titanium oxide , titanium carbide , electrical resistivity and conductivity , x ray photoelectron spectroscopy , sputter deposition , diffraction , oxide , composite material , sputtering , analytical chemistry (journal) , phase (matter) , chemical engineering , metallurgy , nanotechnology , chemistry , optics , physics , electrical engineering , organic chemistry , chromatography , engineering
The main purpose of this work was to prepare of single layered TiC x O y thin films. The depositions were carried out from a TiC target by DC reactive magnetron sputtering, varying the oxygen flow. The presence of oxygen changes the film properties between those of titanium carbide and those of the corresponding titanium oxide. X‐Ray diffraction (XRD) results revealed the occurrence of a face‐centered cubic (TiC‐type) phase, with a clear tendency toward amorphization at the highest oxygen contents. Chemical and structural features strongly influence the film properties, which were analyzed in detail as a function of the preparation conditions. Results indicate a systematic increase in resistivity and a decrease in hardness with the increase in the film's oxygen content.