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Influence of the Structure of a‐SiO x N y Thin Films on Their Electrical Properties
Author(s) -
Rebib Farida,
Tomasella Eric,
Aida Salah,
Dubois Marc,
Bêche Eric,
Cellier Joel,
Jacquet Michel
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730403
Subject(s) - materials science , silicon oxynitride , silicon , x ray photoelectron spectroscopy , silicon oxide , silicon nitride , analytical chemistry (journal) , dangling bond , conductivity , thin film , amorphous solid , argon , oxygen , permittivity , sputtering , nitrogen , dielectric , chemical engineering , crystallography , chemistry , nanotechnology , optoelectronics , engineering , organic chemistry , chromatography
Amorphous silicon oxynitride thin films with composition varying from silicon nitride to silicon oxide were deposited by rf sputtering of a silicon target under different argon–oxygen–nitrogen atmospheres. The FTIR and XPS investigations revealed the presence of a mixture of SiO 2 , Si 3 N 4 and a‐SiO x N y phases. The structural defects were identified and quantified by means of ESR analysis which showed the presence of silicon dangling bonds on decreasing the density which subsequently increases the oxygen content. C – V and I – V measurements were carried out on Pt‐SiO x N y ‐Pt type structures. Permittivity and conductivity values were found to be dependent on both film composition and structure. The conductivity values were found to be low.