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A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In‐line Implantation and PBII Treatments
Author(s) -
Arab Zeinab,
David MarieLaure,
Drouet Michel,
Pichon Luc,
Straboni Alain
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730301
Subject(s) - ion implantation , annealing (glass) , silicon , materials science , hydrogen , plasma , blisters , plasma immersion ion implantation , ion , optoelectronics , chemistry , metallurgy , composite material , physics , organic chemistry , quantum mechanics
Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2 + , 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not induce any significant change in the silicon. With in‐line implantation, only classical defects can be observed in the silicon around the ion projected range. Post‐annealing is needed to obtain the formation of platelets. On the contrary, bubbles and platelets can be observed immediately after PBII implantation. With the highest doses, no post‐annealing is needed to form blisters and cavities, because of the heating due to the PBII treatment.