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Magnetron Sputtering of Aluminium Nitride Thin Films for Thermal Management
Author(s) -
Duquenne Cyril,
Popescu Bogdhan,
Tessier PierreYves,
Besland MariePaule,
Scudeller Yves,
Brylinski Christian,
Delage Sylvain,
Djouadi MAbdou
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200730101
Subject(s) - materials science , sputter deposition , thin film , aluminium nitride , raman spectroscopy , nitride , scanning electron microscope , sputtering , analytical chemistry (journal) , aluminium , silicon , fourier transform infrared spectroscopy , optoelectronics , composite material , chemical engineering , optics , nanotechnology , layer (electronics) , chemistry , physics , engineering , chromatography
Well‐crystallized aluminium nitride (AlN) thin films were synthesized on silicon substrates at room temperature using magnetron sputtering. Physicochemical properties of the film were investigated using X‐ray diffraction, scanning electron microscopy, Fourier transform infrared spectrometry and Raman spectrometry. The thermal conductivity of the AlN films was characterized using an original electro‐thermal technique. Thanks to an optimization of deposition parameters and target preparation, the different hexagonal crystalline orientations of AlN, i.e. (002), (100), (101) were isolated. It appears that AlN thin films deposited by DC magnetron sputtering exhibit a wide range of thermal conductivity, from 2 to 50 W · K −1 · m −1 .