Premium
Transport Phenomena in an Atmospheric‐Pressure Townsend Discharge Fed by N 2 /N 2 O/HMDSO Mixtures
Author(s) -
Enache Ionut,
Caquineau Hubert,
Gherardi Nicolas,
Paulmier Thierry,
Maechler Louison,
Massines Francoise
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200700073
Subject(s) - radical , dissociation (chemistry) , atmospheric pressure , townsend discharge , townsend , chemistry , volume (thermodynamics) , materials science , analytical chemistry (journal) , chemical physics , thermodynamics , chromatography , organic chemistry , meteorology , physics , ion , ionization
This paper focuses on the understanding of the main mechanisms that participate in the growth process of an SiO 2 ‐like film in an atmospheric pressure Townsend discharge in N 2 with small ad‐mixtures of HMDSO and N 2 O. The approach consists of analyzing the influence of operating parameters on the growth rate profile through a fluid dynamics model. The suggested chemical mechanism is constituted by one volume reaction and one surface reaction. This simple model enables us to assume which phenomena control the film growth process among the following mechanisms: HMDSO dissociation by N 2 (A 3 Σ u + ) in Si‐containing radicals, radicals transport to the surface, and surface activation process by plasma.