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XPS Investigation of Plasma‐Deposited Polysiloxane Films Irradiated with Helium Ions
Author(s) -
Gelamo Rogério V.,
Landers Richard,
Rouxinol Francisco P. M.,
Trasferetti Benedito C.,
Bica de Moraes Mário A.,
Davanzo Celso U.,
Durrant Steven F.
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200600100
Subject(s) - x ray photoelectron spectroscopy , irradiation , ion , binding energy , materials science , analytical chemistry (journal) , helium , plasma , ion beam , chemistry , crystallography , chemical engineering , atomic physics , organic chemistry , physics , quantum mechanics , nuclear physics , engineering
This work describes an XPS investigation of plasma‐deposited polysiloxane films irradiated with 170 keV He + ions at fluences, Φ, ranging from 1 × 10 14 to 1 × 10 16 cm −2 . Modifications in the atomic concentrations of the surface atoms with Φ were revealed by changes in the [O]/[Si], [O]/[C] and [C]/[Si] atomic ratios. Surface chemical structure modifications were evidenced by the increasing C1s peak width and asymmetry as Φ was increased, due to the formation of ether and carboxyl functionalities. Moreover, structural transformations were indicated by the positive binding energy shift of the Si2p peaks, due to the increasing Si oxidation. Correlations of the XPS data with other results from previous work on polysiloxanes illustrate the role of ion beam‐induced bond breaking on the structural modifications.