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Study of the Si Chemical Bonding and the Semiconductive Behavior of SiCN Coatings and their Correlation with Anti‐Corrosion Properties
Author(s) -
Loir AnneSophie,
Pech David,
Steyer Philippe,
Gachon Yves,
Héau Christophe,
SánchezLópez Juan Carlos
Publication year - 2007
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200600068
Subject(s) - materials science , x ray photoelectron spectroscopy , amorphous solid , silicon , electrochemistry , chemical bond , corrosion , auger electron spectroscopy , chemical engineering , nitrogen , wafer , metallurgy , composite material , nanotechnology , crystallography , electrode , chemistry , organic chemistry , physics , nuclear physics , engineering
Amorphous hydrogenated SiCN coatings have been deposited by a PACVD process on M2 steel and silicon substrates. The nitrogen content within the coatings was varied by changing the synthesis conditions. The chemical composition and nature of bonding have been studied by XPS and by X‐ray‐induced AES. The electrochemical and the semi‐conductive properties were evaluated by polarization curves and by using the Mott‐Schottky experiments, respectively. When increasing the N/Si ratio, we observed an increase of Si atoms inside the film structure, which were directly bonded to nitrogen. This gradual incorporation of N modified the electrochemical behavior of the films displaying a variation of the density of charge carriers and the semiconductive behavior (p‐ to n‐type). The modified Auger parameter of silicon was used to determine the nature of the silicon chemical bonding inside the [SiCN]‐based coatings and to predict their corrosion behavior.