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Polymerization in Nanocrystalline Diamond Films by Oxygen Incorporation
Author(s) -
Teii Kungen,
Ikeda Tomohiro
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200600044
Subject(s) - raman spectroscopy , materials science , diamond , carbon fibers , carbon film , nanocrystalline material , analytical chemistry (journal) , oxygen , amorphous carbon , amorphous solid , thin film , crystallography , nanotechnology , chemistry , organic chemistry , composite material , physics , composite number , optics
Summary: Structure and resistivity of nanocrystalline diamond films deposited using microwave Ar‐rich/O 2 /CH 4 plasmas have been examined as a function of the O 2 /CH 4 ratio from 0 to 0.53. Addition of O 2 to Ar‐rich/CH 4 plasmas likely reduced the density of C 2 radicals due to loss reactions of O atoms with CH 4 and CH x radicals. The Raman peak of diamond at 1 332 cm −1 was overlapped by the D peak of sp 2 ‐bonded, disordered carbon and its intensity was a little enhanced by the O 2 addition, while the average size of sp 2 ‐bonded carbon clusters in nondiamond phases was increased. Oxygen was incorporated into the films in forms of CO bonds, which bridged the carbon clusters themselves, and formed polymer‐like, large‐unit structures. The resistivity of the films was drastically increased from the order of 10 −4 up to 10 4 Ω · m with a small O 2 addition (1.2 vol.‐% in total pressure), providing novel sensor and storage applications based on oxygen incorporation and desorption.Decomposition of a Raman spectrum showing the diamond, D and G modes of amorphous carbon, and trans ‐polyacetylene peaks. The insert represents a typical SEM image showing a film surface.