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PECVD of Nanocrystalline Si Layers on High‐ T g Polymer Substrates
Author(s) -
MacQueen Luke A.,
Zikovsky Janik,
Dennler Gilles,
Latreche Mohamed,
Czeremuszkin Grzegorz,
Wertheimer Michael R.
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200500145
Subject(s) - plasma enhanced chemical vapor deposition , materials science , nanocrystalline material , silicon , substrate (aquarium) , chemical vapor deposition , polymer , nanocrystalline silicon , polymer substrate , deposition (geology) , chemical engineering , thin film , analytical chemistry (journal) , conductivity , composite material , nanotechnology , crystalline silicon , optoelectronics , organic chemistry , chemistry , amorphous silicon , paleontology , oceanography , sediment , geology , engineering , biology
Summary: Hydrogenated nanocrystalline silicon (nc‐Si:H) was deposited by plasma‐enhanced chemical vapor deposition (PECVD) on transparent polymers in order to qualify these for possible use as electronic substrates. As a first step, plasma etch experiments in pure H 2 revealed small etch rates for these materials. Thin films of nc‐Si:H were then deposited on samples placed on the grounded electrode of a “Reinberg”‐type parallel plate RF (13.56 MHz) PECVD reactor, at various substrate temperatures (25 °C ≤ Ts ≤ 250 °C), using SiH 4 diluted in H 2 as the feed‐gas. Thermally induced failure of the nc‐Si:H/polymer composite was avoided within a certain range of deposition conditions, permitting structural and electrical characterization of the deposits.Temperature‐dependent conductivity, σ ( T ), for nanocrystalline silicon (nc‐Si:H) films on glass and three polymer substrates, all deposited at T s = 175 °C.