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Conversion of Magnetron Deposited TiC Films into Rutile TiO 2
Author(s) -
Nikolova Petranka,
Petkov Mario,
Tinchev Savcho,
Dyulgerska Juliana
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200500106
Subject(s) - materials science , rutile , thin film , raman spectroscopy , sputter deposition , scanning electron microscope , carbon film , microstructure , wafer , pulsed dc , analytical chemistry (journal) , sputtering , chemical engineering , metallurgy , nanotechnology , composite material , optics , chemistry , physics , chromatography , engineering
Summary: TiO 2 films can be obtained by a wide variety of technologies ranging from thermal oxidation, through PVD methods to a direct CVD growth. In this work, we report a two‐step fabrication of thin films of TiO 2 (rutile). For the first time as a starting material were used TiC films deposited on monocrystalline silicon wafers by magnetron DC‐sputtering. The results of treatment of TiC thin films by an H 2 O/HCl gas mixture and Ar as a carrier gas at temperatures up to 1 000 °C and atmospheric pressure are presented. TiC films were converted into thin rutile films with traces of carbon. The microstructure and composition of the as‐deposited TiC films and of the films after treatment were investigated by scanning electron microscopy (SEM), by X‐ray diffraction (XRD) with a Co K α ( λ = 0.179 nm) and a Cu K α source ( λ = 0.154 nm) and by Raman spectroscopy.A SEM image of the treated TiC film.