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Deposition of CeO 2 Films on Si(100) Substrates by Electron Beam Evaporation
Author(s) -
Djanovski Georgi,
Beshkova Milena,
Velinova Sonia,
Mollov Dimitar,
Vlaev Petko,
Kovacheva Daniela,
Vutova Katia,
Mladenov Georgi
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200500095
Subject(s) - thin film , electron beam physical vapor deposition , materials science , substrate (aquarium) , cerium , silicon , evaporation , deposition (geology) , cathode ray , analytical chemistry (journal) , optoelectronics , nanotechnology , electron , metallurgy , chemistry , paleontology , oceanography , physics , chromatography , quantum mechanics , sediment , biology , thermodynamics , geology
Summary: Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizing these parameters, CeO 2 thin films with a strongly preferred (200) orientation could be deposited on Si(100) substrates.XRD patterns of the CeO 2 thin films deposited at various temperatures.