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Influence of the Implantation Dose and of the Annealing Duration on the Raman Spectra of Ion‐Beam Synthesized β ‐FeSi 2 Layers
Author(s) -
Marinova Maya,
Zlateva Genoveva,
Baleva Mitra
Publication year - 2006
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.200500091
Subject(s) - raman spectroscopy , ion implantation , annealing (glass) , materials science , ion , ion beam , analytical chemistry (journal) , crystallite , spectral line , chemistry , optics , metallurgy , physics , organic chemistry , chromatography , astronomy
Summary: The samples under investigation are prepared by ion‐beam synthesis, followed by rapid thermal annealing. Fe ions with two different doses, each of them with two different energies, are implanted into Si substrates. The two step implantation with the iron doses used ensure the formation of unburied polycrystalline continuous β ‐FeSi 2 layers with a thickness of about 50 nm in the case of the lowest implantation dose, and of about 100 nm in the case of the higher one. We observed the same Raman modes, which are predicted theoretically and detected experimentally by other authors as well. The influence of the Fe ion dose and of the annealing time on the Raman spectra behavior is characterized.Raman spectra of a sample obtained by implantation with 5 × 10 16 cm −2 dose of iron ions, and annealed at 900 °C for 60 s.