RBS Investigation of Ion Implanted SiSiO 2 Structures Irradiated with 20 MeV Electrons

Summary: The influence of high‐energy electron irradiation on the redistribution of silicon and oxygen atoms in implanted SiSiO 2 structures has been investigated by Rutherford backscattering spectroscopy (RBS). Two groups of SiSiO 2 samples implanted with different doses of silicon ions (1 × 10 12 cm −2 and 1 × 10 16 cm −2 ) are used. The ion energy of 15 keV is chosen to produce maximum radiation defects at the SiSiO 2 interface. The structures are then irradiated with 20 MeV electrons for different durations (from 60 s up to 120 min). After electron irradiation, the redistribution of the oxygen and silicon atoms in the samples implanted with 1 × 10 12 cm −2 Si + ions is negligible: significant redistribution of these atoms is found only in SiSiO 2 samples implanted a with dose of 10 16 cm −2 . These results demonstrate that the structural changes at the silicon surface of implanted SiSiO 2 samples, which take place after electron irradiation, depend more strongly on the implantation dose than on the electron dose irradiation.RBS spectra of SiSiO 2 samples implanted with silicon ions and subsequently electron irradiated.